STMicroelectronics Introduces First PowerGaN Products For More Energy Efficient, Thinner Power Supplies

P4409I – December 15, 2021 – First PowerGaN_IMAGE products

STPOWER GaN transistors

STPOWER GaN transistors

STMicroelectronics Present First of all PowerGaN Some products
for more energy efficiency, Thinner Power supplies

  • Gallium Nitride (GaN) –based some products deliver better energy Efficiency and allow more compact designs of power supplies for a large range of consumers, industrial, and automotive applications

  • First of all product from full portfolio of ST PowerGaN family in production now; Additional devices in various packages and specification notes future soon

Geneva, Switzerland, December 15, 2021 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, revealed a new family of GaN power semiconductors in the STPOWER portfolio that can dramatically reduce power consumption and enable thinner designs in a wide variety of electronic products. Target applications include consumer equipment such as chargers, external PC power adapters, LED light drivers, and power supplies inside TVs and home appliances. This equipment is produced in large quantities all over the world and, with greater efficiency, can generate significant CO emissions.2 savings. In higher power applications, ST’s PowerGaN devices also benefit telecommunications power supplies, industrial motor drives, solar inverters, as well as electric vehicles and chargers.

Commercialize GaN based some products is the following frontier For power semiconductors, and we are ready at realize the potential of this exciting Technology. Today ST is announce the first one product in a new family, belonging to the STPOWER portfolio, this can deliver breakthrough performance for a large variety power supplies on the other side consumer, industrial, and automotive applications ”, said Edoardo Merli, general manager of the macro power transistor division and vice president of the Automotive and Discrete group of STMicroelectronics. “We are engaged at gradually building youp our PowerGaN wallet to allow clients to design more efficiently, smaller power supplies all over. “

Any further technical information:
Gallium nitride (GaN) is a broadband gap compound semiconductor material capable of withstanding much higher voltages than traditional silicon without compromising on resistance, thereby reducing conduction losses. The products implemented in this technology can also be switched much more efficiently, resulting in very low switching losses. The ability to operate at higher frequencies implies the adoption of smaller passive components. All of these features allow designers to reduce overall losses (reduce heat generated) and improve the efficiency of power converters. As a result, GaN enables miniaturization, making a PC adapter smaller and lighter than today’s ubiquitous chargers, for example.

According to a third-party estimate, the size of a standard cell phone charger can be reduced by up to 40% when using GaN components, or it can be designed to deliver more power in the same size. A similar performance improvement in terms of efficiency and power density can be envisioned for a large number of applications in consumer, industrial and automotive electronics.
The first device in ST’s new G-HEMT transistor family is the 650V SGT120R65AL with a maximum resistance of 120 mΩ (RDS (activated)), a maximum current capacity of 15A and a Kelvin source connection for optimal gate control. It is now available in a standard PowerFLAT 5×6 HV compact surface mount package, priced at $ 3.00 (1000 pieces). Its typical applications are PC adapters, USB wall chargers and wireless charging.

The 650V GaN transistors under development are now available as technical samples. These include the SGT120R65A2S with 120mΩ RDS (activated) in an advanced laminated package, the 2SPAK ™, which eliminates wiring to increase efficiency and reliability in high power and high frequency applications, as well as the SGT65R65AL and SGT65R65A2S both with 65mΩ RDS (activated) in PowerFLAT 5×6 HV and 2SPAK, respectively. Volume production of these products is expected in the second half of 2022.

In addition, a new GaN cascode transistor, SGT250R65ALCS with 250mΩ RDS (activated) in a 5×6 PQFN, belonging to the G-FET family, will be available for sampling in Q3 2022.

The G-FET ™ family of transistors is a very fast, ultra-low Qrr, Rugged GaN Cascode or d-mode FET with standard silicon gate drive for a wide range of power applications.

The G-HEMT ™ family of transistors are ultra-fast zero Qrr HEMT e-mode, easily parallelizable, well suited to very high frequency and power applications.

G-FET and G-HEMT both belong to the PowerGaN family of the STPOWER product portfolio.

For more information, visit www.st.com/gan-transistors and www.st.com/gan-hemt-transistors.

About STMicroelectronics
At ST, we are 46,000 semiconductor technology designers and manufacturers mastering the semiconductor supply chain with state-of-the-art manufacturing facilities. As an independent device manufacturer, we work with more than 100,000 customers and thousands of partners to design and create products, solutions and ecosystems that address their challenges and opportunities, as well as the need to support a more sustainable world. Our technologies enable smarter mobility, more efficient power and power management, and the large-scale deployment of the Internet of Things and 5G technology. ST is committed to becoming carbon neutral by 2027. Further information is available at www.st.com.

For more information, please contact:

Michael markowitz
Director of Technical Media Relations
Phone. : +1 781 591 0354
Email: [email protected]

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Rosemary C. Kearney